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Theoretical calculations of the broadening of dilute Si, Al and Be doped δ layers in GaAs during SIMS depth profiling

✍ Scribed by R Badheka; JA Van den Berg; DG Armour; M Wadsworth


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
410 KB
Volume
44
Category
Article
ISSN
0042-207X

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