๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Dynamic Monte Carlo simulation for SIMS depth profiling of delta-doped layer

โœ Scribed by H.J. Kang; W.S. Kim; D.W. Moon; H.Y. Lee; S.T. Kang; R. Shimizu


Book ID
114170951
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
244 KB
Volume
153
Category
Article
ISSN
0168-583X

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


SIMS Depth Profiling of Delta-doped Laye
โœ Smirnov, V. K.; Simakin, S. G.; Potapov, E. V.; Makarov, V. V. ๐Ÿ“‚ Article ๐Ÿ“… 1996 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 723 KB

Boron and germanium 6-doped silicon samples were studied using SIMS depth profiling on a Cameca IMS-4F instrument with O,', N z + and Cs' primary beams at various energies and incidence angles. The depth resolution characteristics were compared. We show that, with experimental conditions being the s

GaAs delta-doped layers in Si for evalua
โœ D. W. Moon; J. Y. Won; K. J. Kim; H. J. Kim; H. J. Kang; M. Petravic ๐Ÿ“‚ Article ๐Ÿ“… 2000 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 153 KB ๐Ÿ‘ 1 views

Due to the complicated artefacts in SIMS depth profiling, SIMS depth resolution is difficult to evaluate. For evaluation of the SIMS depth resolution, delta-doped layers are more useful than sharp interfaces, because the matrix effect and the sputtering rate change can be minimized in profiling thro