Dynamic Monte Carlo simulation for SIMS depth profiling of delta-doped layer
โ Scribed by H.J. Kang; W.S. Kim; D.W. Moon; H.Y. Lee; S.T. Kang; R. Shimizu
- Book ID
- 114170951
- Publisher
- Elsevier Science
- Year
- 1999
- Tongue
- English
- Weight
- 244 KB
- Volume
- 153
- Category
- Article
- ISSN
- 0168-583X
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๐ SIMILAR VOLUMES
Boron and germanium 6-doped silicon samples were studied using SIMS depth profiling on a Cameca IMS-4F instrument with O,', N z + and Cs' primary beams at various energies and incidence angles. The depth resolution characteristics were compared. We show that, with experimental conditions being the s
Due to the complicated artefacts in SIMS depth profiling, SIMS depth resolution is difficult to evaluate. For evaluation of the SIMS depth resolution, delta-doped layers are more useful than sharp interfaces, because the matrix effect and the sputtering rate change can be minimized in profiling thro