𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Problems in the deconvolution of SIMS depth profiles using delta-doped test structures

✍ Scribed by P.C. Zalm; R.C.M. de Kruif

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
513 KB
Volume
70-71
Category
Article
ISSN
0169-4332

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

SIMS Depth Profiling of Delta-doped Laye
SIMS Depth Profiling of Delta-doped Layers in Silicon
✍ Smirnov, V. K.; Simakin, S. G.; Potapov, E. V.; Makarov, V. V. πŸ“‚ Article πŸ“… 1996 πŸ› John Wiley and Sons 🌐 English βš– 723 KB

Boron and germanium 6-doped silicon samples were studied using SIMS depth profiling on a Cameca IMS-4F instrument with O,', N z + and Cs' primary beams at various energies and incidence angles. The depth resolution characteristics were compared. We show that, with experimental conditions being the s

Toward a better reliability in the decon
Toward a better reliability in the deconvolution of SIMS depth profiles
✍ Gautier, B.; Prudon, G.; Dupuy, J. C. πŸ“‚ Article πŸ“… 1998 πŸ› John Wiley and Sons 🌐 English βš– 273 KB πŸ‘ 2 views

In this paper, the problem of the deconvolution of SIMS depth proÐles is addressed. In particular, the hypotheses that are necessary for the deconvolution to be possible (in the actual state of the art) in the case of the SIMS signal are reviewed. Then, the principle of regularization, which is a ma

Effectiveness and Limits of the Deconvol
Effectiveness and Limits of the Deconvolution of SIMS Depth Profiles of Boron in Silicon
✍ Gautier, B.; Dupuy, J. C.; Prost, R.; Prudon, G. πŸ“‚ Article πŸ“… 1997 πŸ› John Wiley and Sons 🌐 English βš– 533 KB

In this paper, an iterative algorithm is used in order to deconvolve some real and simulated SIMS proÐles of boron-doped layers in silicon. The real SIMS proÐles are obtained by the analysis of delta layers of boron-doped silicon in a silicon matrix, analysed in a Cameca IMS3/4f instrument at obliq