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SIMS round-robin study of depth profiling of arsenic implants in silicon

โœ Scribed by M. Tomita; T. Hasegawa; S. Hashimoto; S. Hayashi; Y. Homma; S. Kakehashi; Y. Kazama; K. Koezuka; H. Kuroki; K. Kusama; Z. Li; S. Miwa; S. Miyaki; Y. Okamoto; K. Okuno; S. Saito; S. Sasaki; H. Shichi; H. Shinohara; F. Toujou; Y. Ueki; Y. Yamamoto

Book ID
108417843
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
147 KB
Volume
203-204
Category
Article
ISSN
0169-4332

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Boron and germanium 6-doped silicon samples were studied using SIMS depth profiling on a Cameca IMS-4F instrument with O,', N z + and Cs' primary beams at various energies and incidence angles. The depth resolution characteristics were compared. We show that, with experimental conditions being the s