Range evaluation in SIMS depth profiles of Er-implantations in silicon
โ Scribed by K. Mayerhofer; H. Foisner; K. Piplits; G. Hobler; L. Palmetshofer; H. Hutter
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 259 KB
- Volume
- 252
- Category
- Article
- ISSN
- 0169-4332
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๐ SIMILAR VOLUMES
Boron and germanium 6-doped silicon samples were studied using SIMS depth profiling on a Cameca IMS-4F instrument with O,', N z + and Cs' primary beams at various energies and incidence angles. The depth resolution characteristics were compared. We show that, with experimental conditions being the s
## q ลฝ . The dopant and associated damage profiles in 2 MeV Er ion-implanted 100 Si were investigated using Rutherford ลฝ . backscattering spectroscopy and channelling RBSrC technology. A convolution program was used to extract the concentration distributions of Er from the measured RBS spectra. Wh