Implanted dopant and associated damage profile in MeV 166Er+ implanted silicon

✍ Scribed by Yuguo Li; Chunyu Tan; Jingping Zhang; Chengshan Xue; Honglei Xu; Pijun Liu; Lei Wang

• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 129 KB
• Volume: 264
• Category: Article
• ISSN: 0375-9601
• DOI: 10.1016/s0375-9601(99)00843-9

✦ Synopsis

q

Ž . The dopant and associated damage profiles in 2 MeV Er ion-implanted 100 Si were investigated using Rutherford Ž . backscattering spectroscopy and channelling RBSrC technology. A convolution program was used to extract the concentration distributions of Er from the measured RBS spectra. While the values of the projected range R obtained from p the experiments agree well with those from TRIM96 simulations, the values of projected range straggling D R from the p experiments are systematically larger than those from the simulations by a factor of 18%. The damage profile in the silicon substrate induced by 2.0 MeV Er q at a dose of 1 = 10 14 ionsrcm 2 was extracted using the multiple-scattering dechannelling model of Feldman, and the result is in good agreement with the TRIM96 calculation.