𝔖 Bobbio Scriptorium

✦ LIBER ✦

Lattice location and dopant behavior of group II and VI elements implanted in silicon

✍ Scribed by O. Meyer; N.G.E. Johansson; S.T. Picraux; J.W. Mayer

Publisher: Elsevier Science
Year: 1970
Tongue: English
Weight: 224 KB
Volume: 8
Category: Article
ISSN: 0038-1098
DOI: 10.1016/0038-1098(70)90297-8

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Lattice location of the group V elements

Lattice location of the group V elements As and Sb in ZnO

✍ U. Wahl; J.G. Correia; S. Decoster; T. Mendonça 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 368 KB

5d transition and 4f rare earth elements

5d transition and 4f rare earth elements in II–VI semiconductors as luminescent centres and probes in diagnostics of implanted layers

✍ V.V. Ushakov; A.A. Gippius 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 314 KB

Lattice locations of erbium implants in

Lattice locations of erbium implants in silicon : Y. S. Tang, Zhang Jingping, K. C. Heasman and B. J. Sealy. Solid St. Commun.72(10), 991 (1989)

📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 110 KB

Landolt-Börnstein. Numerical data and fu

Landolt-Börnstein. Numerical data and functional relationships in science and technology. New Series. Group III: Crystal and Solid State Physics. Vol. 22: Semiconductors. Subvolume a: Intrinsic Properties of Group IV Elements and III-V, II-VI and I-VII Compounds. Ed. by O, Madelung Springer-Verlag Berlin-Heidelberg-New York-London-Paris-Tokyo 1987. XII + 451 pp. Hard cover DM 1120.—, ISBN 3–540–16609–2

✍ P. Paufler 📂 Article 📅 1988 🏛 John Wiley and Sons 🌐 English ⚖ 52 KB 👁 1 views