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Damage production in hydrogen-implanted silicon

✍ Scribed by J. Lahtinen; A. Vehanen; E. Punkka; P. Hautojärvi; J. Keinonen; M. Hautala; E. Rauhala; V. Karttunen; A. Kuronen; J. Räisänen


Publisher
John Wiley and Sons
Year
1988
Tongue
English
Weight
223 KB
Volume
12
Category
Article
ISSN
0142-2421

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## q Ž . The dopant and associated damage profiles in 2 MeV Er ion-implanted 100 Si were investigated using Rutherford Ž . backscattering spectroscopy and channelling RBSrC technology. A convolution program was used to extract the concentration distributions of Er from the measured RBS spectra. Wh