Implanted dopant and associated damage p
✍
Yuguo Li; Chunyu Tan; Jingping Zhang; Chengshan Xue; Honglei Xu; Pijun Liu; Lei
📂
Article
📅
2000
🏛
Elsevier Science
🌐
English
⚖ 129 KB
## q Ž . The dopant and associated damage profiles in 2 MeV Er ion-implanted 100 Si were investigated using Rutherford Ž . backscattering spectroscopy and channelling RBSrC technology. A convolution program was used to extract the concentration distributions of Er from the measured RBS spectra. Wh