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Depth profiles and damage annealing of 1.06 MeV As2+ Implanted in silicon

✍ Scribed by A. Armigliato; R. Nipoti; G.G. Bentini; A.M. Mazzone; M. Bianconi; A. Nylandsted Larsen; A. Gasparotto

No coin nor oath required. For personal study only.

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