Boron depth profiles and residual damage following rapid thermal annealing of low-temperature BSi molecular ion implantation in silicon

✍ Scribed by J.H. Liang; S.C. Wang

• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 366 KB
• Volume: 261
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/j.nimb.2007.03.067