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Effect of lattice damage on impurity depth profiles in BF2+-implanted silicon

✍ Scribed by M.C. Paek; H.B. Im; O.J. Kwon; S.W. Kang


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
633 KB
Volume
43-44
Category
Article
ISSN
0257-8972

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Secondary ion yields are known to be strongly enhanced by the presence of oxygen in the analysed sample. The magnitude of the yield enhancement is often signiÐcantly di †erent for impurity and matrix ion species. This kind of SIMS matrix e †ect severely aggravates concentration calibration in depth