Boron and germanium 6-doped silicon samples were studied using SIMS depth profiling on a Cameca IMS-4F instrument with O,', N z + and Cs' primary beams at various energies and incidence angles. The depth resolution characteristics were compared. We show that, with experimental conditions being the s
โฆ LIBER โฆ
SIMS depth profile analysis of sodium in silicon dioxide
โ Scribed by Y. Yamamoto; N. Shimodaira
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 454 KB
- Volume
- 255
- Category
- Article
- ISSN
- 0169-4332
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