Dopant atom and cluster ion behaviour in silicon arising in SIMS depth profiling
β Scribed by C.-E. Richter; M. Trapp
- Publisher
- Elsevier Science
- Year
- 1984
- Tongue
- English
- Weight
- 453 KB
- Volume
- 62
- Category
- Article
- ISSN
- 0168-1176
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π SIMILAR VOLUMES
Boron and germanium 6-doped silicon samples were studied using SIMS depth profiling on a Cameca IMS-4F instrument with O,', N z + and Cs' primary beams at various energies and incidence angles. The depth resolution characteristics were compared. We show that, with experimental conditions being the s
In this paper, an iterative algorithm is used in order to deconvolve some real and simulated SIMS proΓles of boron-doped layers in silicon. The real SIMS proΓles are obtained by the analysis of delta layers of boron-doped silicon in a silicon matrix, analysed in a Cameca IMS3/4f instrument at obliq