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SIMS depth-profiling studies: The effect of laser annealing on the distribution of ion-implanted boron in silicon

✍ Scribed by W.H. Christie; C.W. White

Publisher
Elsevier Science
Year
1980
Weight
94 KB
Volume
100
Category
Article
ISSN
0167-2584

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Effectiveness and Limits of the Deconvol
Effectiveness and Limits of the Deconvolution of SIMS Depth Profiles of Boron in Silicon
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In this paper, an iterative algorithm is used in order to deconvolve some real and simulated SIMS proÐles of boron-doped layers in silicon. The real SIMS proÐles are obtained by the analysis of delta layers of boron-doped silicon in a silicon matrix, analysed in a Cameca IMS3/4f instrument at obliq