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Depth profiling of shallow arsenic implants in silicon using SIMS

โœ Scribed by J. B. Clegg


Publisher
John Wiley and Sons
Year
1987
Tongue
English
Weight
585 KB
Volume
10
Category
Article
ISSN
0142-2421

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Boron and germanium 6-doped silicon samples were studied using SIMS depth profiling on a Cameca IMS-4F instrument with O,', N z + and Cs' primary beams at various energies and incidence angles. The depth resolution characteristics were compared. We show that, with experimental conditions being the s