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Toward accurate in-depth profiling of As and P ultra-shallow implants by SIMS

✍ Scribed by A. Merkulov; E. de Chambost; M. Schuhmacher; P. Peres

Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
154 KB
Volume
231-232
Category
Article
ISSN
0169-4332

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Secondary ion yields are known to be strongly enhanced by the presence of oxygen in the analysed sample. The magnitude of the yield enhancement is often signiÐcantly di †erent for impurity and matrix ion species. This kind of SIMS matrix e †ect severely aggravates concentration calibration in depth