✦ LIBER ✦
Dopant profiling of ultra shallow As implanted in Si with and without spike annealing using medium energy ion scattering
✍ Scribed by S. Abo; S. Ichihara; T. Lohner; F. Wakaya; T. Eimori; Y. Inoue; M. Takai
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 150 KB
- Volume
- 237
- Category
- Article
- ISSN
- 0168-583X
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