Quantitative depth profiling of ultra-shallow phosphorus implants in silicon using time-of-flight secondary ion mass spectrometry and the nuclear reaction 31P(α,p0)34S

✍ Scribed by M.A. Bolorizadeh; S. Ruffell; I.V. Mitchell; R. Gwilliam

• Publisher: Elsevier Science
• Year: 2004
• Tongue: English
• Weight: 350 KB
• Volume: 225
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/j.nimb.2004.04.180