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SIMON-A simulator for single-electron tunnel devices and circuits

✍ Scribed by Wasshuber, C.; Kosina, H.; Selberherr, S.

Book ID
119778223
Publisher
IEEE
Year
1997
Tongue
English
Weight
219 KB
Volume
16
Category
Article
ISSN
0278-0070

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We introduce a single-electron device and circuit simulator, called SIMON, with the following features. Tunnel junctions, capacitors, constant voltage sources, piecewise-linear time-dependent voltage sources and voltage controlled voltage sources can be connected arbitrarily to form a single-electro

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## Abstract A circuit theory for metallic single‐electron tunnelling (SET) junctions is presented. In detail circuits with a single SET junction in arbitrary environments are described. Based on the conservation of energy in the circuitsβ€”a fundamental circuit theoremβ€”equivalent circuit elements are