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Static and Dynamic Modeling of Single-Electron Memory for Circuit Simulation

✍ Scribed by Wei Xuan; Beaumont, A.; Guilmain, M.; Bounouar, M.; Baboux, N.; Etzkorn, J.; Drouin, D.; Calmon, F.


Book ID
114620785
Publisher
IEEE
Year
2012
Tongue
English
Weight
890 KB
Volume
59
Category
Article
ISSN
0018-9383

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A simulator for single-electron tunnel d
✍ I. Karafyllidis πŸ“‚ Article πŸ“… 1999 πŸ› Elsevier Science 🌐 English βš– 65 KB

Simulated annealing is proposed as a simulation method for single-electron tunnel devices and circuits. Tunnel junctions, voltage sources and capacitors are used as elements for the construction of single-electron circuits. The simulator is applied successfully to the twostage tunnel junction invert