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A simulator for single-electron tunnel devices and circuits based on simulated annealing

✍ Scribed by I. Karafyllidis

Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
65 KB
Volume
25
Category
Article
ISSN
0749-6036

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✦ Synopsis

Simulated annealing is proposed as a simulation method for single-electron tunnel devices and circuits. Tunnel junctions, voltage sources and capacitors are used as elements for the construction of single-electron circuits. The simulator is applied successfully to the twostage tunnel junction inverter circuit. The computation time is practically acceptable when cooling schedule and cooling parameters are appropriately chosen.

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