𝔖 Bobbio Scriptorium
✦   LIBER   ✦

A single-electron device and circuit simulator

✍ Scribed by Christoph Wasshuber; Hans Kosina

Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
135 KB
Volume
21
Category
Article
ISSN
0749-6036

No coin nor oath required. For personal study only.

✦ Synopsis

We introduce a single-electron device and circuit simulator, called SIMON, with the following features. Tunnel junctions, capacitors, constant voltage sources, piecewise-linear time-dependent voltage sources and voltage controlled voltage sources can be connected arbitrarily to form a single-electron device or circuit. With various parameters one controls transient and stationary simulation modes. All node voltages, node charges and currents in any branch of the network can be output to files for later post-processing. The tunnelling of single electrons is simulated with a Monte Carlo technique where the change in free energy of the whole network determines tunnel rates of possible tunnel events.

πŸ“œ SIMILAR VOLUMES

A simulator for single-electron tunnel d
A simulator for single-electron tunnel devices and circuits based on simulated annealing
✍ I. Karafyllidis πŸ“‚ Article πŸ“… 1999 πŸ› Elsevier Science 🌐 English βš– 65 KB

Simulated annealing is proposed as a simulation method for single-electron tunnel devices and circuits. Tunnel junctions, voltage sources and capacitors are used as elements for the construction of single-electron circuits. The simulator is applied successfully to the twostage tunnel junction invert

Multiple-valued logic devices using sing
Multiple-valued logic devices using single-electron circuits
✍ Takashi Yamada; Yoshihito Amemiya πŸ“‚ Article πŸ“… 2000 πŸ› Elsevier Science 🌐 English βš– 71 KB

Multiple-valued logic devices can be constructed compactly by utilizing quantized behavior of single-electron circuits. As an example, a single-electron multiple-valued Hopfield network solving optimization problems is designed. Computer simulation shows that the network can successfully converge to

Towards a circuit theory for metallic si
Towards a circuit theory for metallic single-electron tunnelling devices
✍ J. Hoekstra πŸ“‚ Article πŸ“… 2007 πŸ› John Wiley and Sons 🌐 English βš– 253 KB

## Abstract A circuit theory for metallic single‐electron tunnelling (SET) junctions is presented. In detail circuits with a single SET junction in arbitrary environments are described. Based on the conservation of energy in the circuitsβ€”a fundamental circuit theoremβ€”equivalent circuit elements are