Nanoelectronic single-electron transistor circuits and architectures
β Scribed by C. P. Gerousis; S. M. Goodnick; W. Porod
- Publisher
- John Wiley and Sons
- Year
- 2004
- Tongue
- English
- Weight
- 303 KB
- Volume
- 32
- Category
- Article
- ISSN
- 0098-9886
- DOI
- 10.1002/cta.284
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π SIMILAR VOLUMES
We introduce a single-electron device and circuit simulator, called SIMON, with the following features. Tunnel junctions, capacitors, constant voltage sources, piecewise-linear time-dependent voltage sources and voltage controlled voltage sources can be connected arbitrarily to form a single-electro
Simulated annealing is proposed as a simulation method for single-electron tunnel devices and circuits. Tunnel junctions, voltage sources and capacitors are used as elements for the construction of single-electron circuits. The simulator is applied successfully to the twostage tunnel junction invert