๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

An Adaptive Algorithm for Single-Electron Device and Circuit Simulation

โœ Scribed by Allec, N.; Knobel, R.G.; Li Shang

Book ID
118161119
Publisher
IEEE
Year
2010
Tongue
English
Weight
317 KB
Volume
18
Category
Article
ISSN
1063-8210

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

A single-electron device and circuit sim
A single-electron device and circuit simulator
โœ Christoph Wasshuber; Hans Kosina ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 135 KB

We introduce a single-electron device and circuit simulator, called SIMON, with the following features. Tunnel junctions, capacitors, constant voltage sources, piecewise-linear time-dependent voltage sources and voltage controlled voltage sources can be connected arbitrarily to form a single-electro

A simulator for single-electron tunnel d
A simulator for single-electron tunnel devices and circuits based on simulated annealing
โœ I. Karafyllidis ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 65 KB

Simulated annealing is proposed as a simulation method for single-electron tunnel devices and circuits. Tunnel junctions, voltage sources and capacitors are used as elements for the construction of single-electron circuits. The simulator is applied successfully to the twostage tunnel junction invert