𝔖 Bobbio Scriptorium

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An improved electron and hole mobility model for general purpose device simulation

✍ Scribed by Darwish, M.N.; Lentz, J.L.; Pinto, M.R.; Zeitzoff, P.M.; Krutsick, T.J.; Hong Ha Vuong

Book ID: 114536953
Publisher: IEEE
Year: 1997
Tongue: English
Weight: 265 KB
Volume: 44
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.622611

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