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[IEEE 2009 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - San Diego, CA, USA (2009.09.9-2009.09.11)] 2009 International Conference on Simulation of Semiconductor Processes and Devices - Monte Carlo-Based Analytical Models for Electron and Hole Electrical Parameters in Strained SiGeC Alloys

โœ Scribed by Michaillat, Marc; Rideau, Denis; Aniel, Frederic; Tavernier, Clement; Jaouen, Herve

Book ID
118006107
Publisher
IEEE
Year
2009
Weight
474 KB
Volume
0
Category
Article

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๐Ÿ“œ SIMILAR VOLUMES

[IEEE SISPAD '97. 1997 International Con
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โœ Kai Chen, ; Chenming Hu, ; Peng Fang, ; Gupta, A.; Ming Ren Lin, ; Wollesen, D.L ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› IEEE ๐ŸŒ English โš– 289 KB