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An improved technique and experimental results for the extraction of electron and hole mobilities in MOS accumulation layers

✍ Scribed by Chindalore, G.L.; McKeon, J.B.; Mudanai, S.; Hareland, S.A.; Shih, W.-K.; Wang, C.; Tasch, A.F., Jr.; Maziar, C.M.

No coin nor oath required. For personal study only.

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