An experimental study of the effect of quantization on the effective electrical oxide thickness in MOS electron and hole accumulation layers in heavily doped Si

✍ Scribed by Chindalore, G.; Shih, W.-K.; Jallepalli, S.; Hareland, S.A.; Tasch, A.F.; Maziar, C.M.

• Book ID: 114538070
• Publisher: IEEE
• Year: 2000
• Tongue: English
• Weight: 150 KB
• Volume: 47
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.824741