๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

A new technology for metallic multilayer single electron tunneling devices

โœ Scribed by Th. Weimann; H. Scherer; H. Wolf; V.A. Krupenin; J. Niemeyer


Book ID
114155856
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
261 KB
Volume
41-42
Category
Article
ISSN
0167-9317

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Towards a circuit theory for metallic si
โœ J. Hoekstra ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 253 KB

## Abstract A circuit theory for metallic singleโ€electron tunnelling (SET) junctions is presented. In detail circuits with a single SET junction in arbitrary environments are described. Based on the conservation of energy in the circuitsโ€”a fundamental circuit theoremโ€”equivalent circuit elements are

A simulator for single-electron tunnel d
โœ I. Karafyllidis ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 65 KB

Simulated annealing is proposed as a simulation method for single-electron tunnel devices and circuits. Tunnel junctions, voltage sources and capacitors are used as elements for the construction of single-electron circuits. The simulator is applied successfully to the twostage tunnel junction invert