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Remote hydrogen microwave plasma chemical vapor deposition from methylsilane precursors. 1. Growth mechanism and chemical structure of deposited a-SiC:H films

✍ Scribed by Wrobel, A.M.; Walkiewicz-Pietrzykowska, A.; Uznanski, P.

Book ID: 121820156
Publisher: Elsevier Science
Year: 2014
Tongue: English
Weight: 700 KB
Volume: 564
Category: Article
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2014.04.087

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