𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Reliability characteristics of high-K gate dielectrics HfO2 in metal-oxide semiconductor capacitors

✍ Scribed by Dedong Han; Jinfeng Kang; Changhai Lin; Ruqi Han


Book ID
108411266
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
146 KB
Volume
66
Category
Article
ISSN
0167-9317

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Improved electrical characteristics and
✍ Xiao Zou; Guojia Fang; Longyan Yuan; Xingsheng Tong; Xingzhong Zhao 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 809 KB

High j HfO x N y film was deposited on amorphous InGaZnO (a-IGZO) by radio-frequency reactive sputtering using an HfO 2 target in nitrogen plus argon ambience, the electrical characteristics and reliability of a-IGZO metal-insulator-semiconductor (MIS) capacitors were investigated. Experimental resu