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Effect of La incorporation on reliability characteristics of metal–oxide-semiconductor capacitors with hafnium based high-k dielectrics

✍ Scribed by Tea Wan Kim; Tae-Young Jang; Donghyup Kim; Jung Woo Kim; Jae Kyeong Jeong; Rino Choi; Myung Soo Lee; Hyoungsub Kim

Book ID
113797740
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
497 KB
Volume
89
Category
Article
ISSN
0167-9317

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High j HfO x N y film was deposited on amorphous InGaZnO (a-IGZO) by radio-frequency reactive sputtering using an HfO 2 target in nitrogen plus argon ambience, the electrical characteristics and reliability of a-IGZO metal-insulator-semiconductor (MIS) capacitors were investigated. Experimental resu