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Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer

✍ Scribed by Koveshnikov, S.; Tsai, W.; Ok, I.; Lee, J. C.; Torkanov, V.; Yakimov, M.; Oktyabrsky, S.

Book ID: 126975446
Publisher: American Institute of Physics
Year: 2006
Tongue: English
Weight: 352 KB
Volume: 88
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2164327

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