✦ LIBER ✦
Wide-bandgap high-k Y[sub 2]O[sub 3] as passivating interlayer for enhancing the electrical properties and high-field reliability of n-Ge metal-oxide-semiconductor capacitors with high-k HfTiO gate dielectric
✍ Scribed by Li, C. X.; Lai, P. T.
- Book ID
- 120939827
- Publisher
- American Institute of Physics
- Year
- 2009
- Tongue
- English
- Weight
- 470 KB
- Volume
- 95
- Category
- Article
- ISSN
- 0003-6951
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