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Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO[sub 2] gate dielectrics and Î±-SiâSiO[sub 2] interlayers

✍ Scribed by Koester, S. J.; Kiewra, E. W.; Sun, Yanning; Neumayer, D. A.; Ott, J. A.; Copel, M.; Sadana, D. K.; Webb, D. J.; Fompeyrine, J.; Locquet, J.-P.; Marchiori, C.; Sousa, M.; Germann, R.

Book ID: 120432782
Publisher: American Institute of Physics
Year: 2006
Tongue: English
Weight: 604 KB
Volume: 89
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2235862

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Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO[sub 2] gate dielectrics and Î±-SiâSiO[sub 2] interlayers

Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO[sub 2] gate dielectrics and Î±-SiâSiO[sub 2] interlayers