✦ LIBER ✦

Effects of NO Annealing and GaO[sub x]N[sub y] Interlayer on GaN Metal-Insulator-Semiconductor Capacitor with SiO[sub 2] Gate Dielectric

✍ Scribed by Lin, L. M.; Lai, P. T.

Book ID: 126685174
Publisher: The Electrochemical Society
Year: 2007
Tongue: English
Weight: 180 KB
Volume: 154
Category: Article
ISSN: 0013-4651
DOI: 10.1149/1.2429043

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Evidence of electron and hole inversion

Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO[sub 2] gate dielectrics and Î±-SiâSiO[sub 2] interlayers

✍ Koester, S. J.; Kiewra, E. W.; Sun, Yanning; Neumayer, D. A.; Ott, J. A.; Copel, 📂 Article 📅 2006 🏛 American Institute of Physics 🌐 English ⚖ 604 KB

Wide-bandgap high-k Y[sub 2]O[sub 3] as

Wide-bandgap high-k Y[sub 2]O[sub 3] as passivating interlayer for enhancing the electrical properties and high-field reliability of n-Ge metal-oxide-semiconductor capacitors with high-k HfTiO gate dielectric

✍ Li, C. X.; Lai, P. T. 📂 Article 📅 2009 🏛 American Institute of Physics 🌐 English ⚖ 470 KB