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Degradation and hard breakdown transient of thin gate oxides in metalâSiO[sub 2]âSi capacitors: Dependence on oxide thickness

✍ Scribed by Lombardo, S.; La Magna, A.; Spinella, C.; Gerardi, C.; Crupi, F.

Book ID: 121367328
Publisher: American Institute of Physics
Year: 1999
Tongue: English
Weight: 512 KB
Volume: 86
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.371701

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