✦ LIBER ✦

The temperature dependence of the electron mobility degradation mechanisms in n-channel metal-oxide-semiconductor field effect transistors with ZrO[sub 2] and Sm[sub 2]O[sub 3] gate dielectrics

✍ Scribed by Ho, Hsiao-shuo; Chang, Ingram Yin-ku; Lee, Joseph Ya-min

Book ID: 125435741
Publisher: American Institute of Physics
Year: 2007
Tongue: English
Weight: 580 KB
Volume: 91
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2802729

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