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High-performance self-aligned inversion-channel In[sub 0.53]Ga[sub 0.47]As metal-oxide-semiconductor field-effect-transistor with Al[sub 2]O[sub 3]âGa[sub 2]O[sub 3](Gd[sub 2]O[sub 3]) as gate dielectrics

✍ Scribed by Lin, T. D.; Chiu, H. C.; Chang, P.; Tung, L. T.; Chen, C. P.; Hong, M.; Kwo, J.; Tsai, W.; Wang, Y. C.

Book ID: 120368309
Publisher: American Institute of Physics
Year: 2008
Tongue: English
Weight: 729 KB
Volume: 93
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2956393

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High-performance self-aligned inversion-channel In[sub 0.53]Ga[sub 0.47]As metal-oxide-semiconductor field-effect-transistor with Al[sub 2]O[sub 3]âGa[sub 2]O[sub 3](Gd[sub 2]O[sub 3]) as gate dielectrics

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