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High channel mobility 4H-SiC metal-oxide-semiconductor field-effect transistor with low temperature metal-organic chemical-vapor deposition grown Al[sub 2]O[sub 3] gate insulator

✍ Scribed by Hino, S.; Hatayama, T.; Kato, J.; Tokumitsu, E.; Miura, N.; Oomori, T.

Book ID: 121512848
Publisher: American Institute of Physics
Year: 2008
Tongue: English
Weight: 237 KB
Volume: 92
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2903103

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✍ Lin, T. D.; Chiu, H. C.; Chang, P.; Tung, L. T.; Chen, C. P.; Hong, M.; Kwo, J.; 📂 Article 📅 2008 🏛 American Institute of Physics 🌐 English ⚖ 729 KB