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In[sub 0.53]Ga[sub 0.47]As based metal oxide semiconductor capacitors with atomic layer deposition ZrO[sub 2] gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1ânm

✍ Scribed by Koveshnikov, S.; Goel, N.; Majhi, P.; Wen, H.; Santos, M. B.; Oktyabrsky, S.; Tokranov, V.; Kambhampati, R.; Moore, R.; Zhu, F.; Lee, J.; Tsai, W.

Book ID: 120444534
Publisher: American Institute of Physics
Year: 2008
Tongue: English
Weight: 648 KB
Volume: 92
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2931031

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In[sub 0.53]Ga[sub 0.47]As based metal oxide semiconductor capacitors with atomic layer deposition ZrO[sub 2] gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1ânm

In[sub 0.53]Ga[sub 0.47]As based metal oxide semiconductor capacitors with atomic layer deposition ZrO[sub 2] gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1ânm