High-k gate stack on GaAs and InGaAs using in situ passivation with amorphous silicon

✍ Scribed by S. Oktyabrsky; V. Tokranov; M. Yakimov; R. Moore; S. Koveshnikov; W. Tsai; F. Zhu; J.C. Lee

• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 824 KB
• Volume: 135
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/j.mseb.2006.08.018