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Bias dependence of PBTI degradation mechanism in metal-oxide-semiconductor field effect transistors with La-incorporated hafnium-based dielectric

✍ Scribed by Tae-Young Jang; Dong-Hyoub Kim; Jungwoo Kim; Jun Suk Chang; Jae Kyeong Jeong; Yoon-Uk Heo; Young-Ki Kim; Changhwan Choi; Hokyung Park; Rino Choi

Book ID: 104053005
Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 321 KB
Volume: 88
Category: Article
ISSN: 0167-9317
DOI: 10.1016/j.mee.2011.03.106

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