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Reliability characteristics of metal-oxide-semiconductor capacitors with 0.72 nm equivalent-oxide-thickness LaO/HfO2 stacked gate dielectrics

✍ Scribed by Chuan-Hsi Liu; Hung-Wen Hsu; Hung-Wen Chen; Pi-Chun Juan; Mu-Chun Wang; Chin-Po Cheng; Heng-Sheng Huang

Book ID: 113797776
Publisher: Elsevier Science
Year: 2012
Tongue: English
Weight: 709 KB
Volume: 89
Category: Article
ISSN: 0167-9317
DOI: 10.1016/j.mee.2011.04.009

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