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1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density

✍ Scribed by Suzuki, R.; Taoka, N.; Yokoyama, M.; Lee, S.; Kim, S. H.; Hoshii, T.; Yasuda, T.; Jevasuwan, W.; Maeda, T.; Ichikawa, O.; Fukuhara, N.; Hata, M.; Takenaka, M.; Takagi, S.

Book ID: 121502994
Publisher: American Institute of Physics
Year: 2012
Tongue: English
Weight: 988 KB
Volume: 100
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3698095

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