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InGaAs metal-oxide-semiconductor capacitors with HfO[sub 2] gate dielectric grown by atomic-layer deposition

✍ Scribed by Goel, N.; Majhi, P.; Chui, C. O.; Tsai, W.; Choi, D.; Harris, J. S.

Book ID: 120976099
Publisher: American Institute of Physics
Year: 2006
Tongue: English
Weight: 741 KB
Volume: 89
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2363959

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