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Impact of titanium addition on film characteristics of HfO[sub 2] gate dielectrics deposited by atomic layer deposition

✍ Scribed by Triyoso, D. H.; Hegde, R. I.; Zollner, S.; Ramon, M. E.; Kalpat, S.; Gregory, R.; Wang, X.-D.; Jiang, J.; Raymond, M.; Rai, R.; Werho, D.; Roan, D.; White, B. E.; Tobin, P. J.

Book ID: 120492292
Publisher: American Institute of Physics
Year: 2005
Tongue: English
Weight: 785 KB
Volume: 98
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.2030407

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