We present a synchrotron-based XPS investigation on the interface between InAs and Al 2 O 3 or HfO 2 layers, deposited by ALD at different temperatures, for InAs substrates with different surface orientations as well as for InAs nanowires. We reveal the composition of the native Oxide and how the hi
Deposition of HfO2 on InAs by atomic-layer deposition
✍ Scribed by D. Wheeler; L.-E. Wernersson; L. Fröberg; C. Thelander; A. Mikkelsen; K.-J. Weststrate; A. Sonnet; E.M. Vogel; A. Seabaugh
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 395 KB
- Volume
- 86
- Category
- Article
- ISSN
- 0167-9317
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