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Atomic Layer Deposition of HfO2 Thin Films Employing a Heteroleptic Hafnium Precursor

โœ Scribed by Ke Xu; Andrian P. Milanov; Harish Parala; Christian Wenger; Canan Baristiran-Kaynak; Kaoutar Lakribssi; Teodor Toader; Claudia Bock; Detlef Rogalla; Hans-Werner Becker; Ulrich Kunze; Anjana Devi


Publisher
John Wiley and Sons
Year
2012
Tongue
English
Weight
842 KB
Volume
18
Category
Article
ISSN
0948-1907

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๐Ÿ“œ SIMILAR VOLUMES


Atomic Layer Deposition of Ruthenium Thi
โœ Hongtao Wang; Roy G. Gordon; Roger Alvis; Robert M. Ulfig ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 846 KB

## Abstract Ruthenium thin films are deposited by atomic layer deposition (ALD) from bis(__N__,__N__'โ€diโ€__tert__โ€butylacetamidinato)ruthenium(II) dicarbonyl and O~2~. Highly conductive, dense, and pure thin films can be deposited when oxygen exposure, __E__~O~, approaches a certain threshold (__E_