## Abstract Thin films of tantalum oxide have been deposited on Si(100) substrates using atomic layer deposition (ALD) employing the TaI~5~ and O~2~ precursor combination. Growth was studied in the temperature region 400 to 700 °C. The resulting films were found to be iodine‐free above 450 °C, and
Atomic Layer Deposition of Co3O4 Thin Films Using a CoI2/O2 Precursor Combination
✍ Scribed by M. Rooth; E. Lindahl; A. Hårsta
- Publisher
- John Wiley and Sons
- Year
- 2006
- Tongue
- English
- Weight
- 394 KB
- Volume
- 12
- Category
- Article
- ISSN
- 0948-1907
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## Abstract Thin films of SnO~2~ have been successfully deposited by atomic layer deposition (ALD) using the SnI~4~/O~2~ precursor combination. Depositions were carried out in the temperature range 400–750 °C on SiO~2~/Si(100) and single‐crystalline α‐Al~2~O~3~(012) substrates. The films were found
## Abstract Atomic layer deposition (ALD) at 100 °C provides a conformal coating on woven cotton with a tortuous and complex surfaces. The woven structures are completely preserved and replicated with thin coating of Al~2~O~3~, even after removing the cotton templates. The replicated woven structur